We will no longer need to wait for our computers or laptops to boot up
Innovative Magnetoresistive Random Access Memory technology enables bigger and longer lasting memory in electronic systems
A team of researchers from the Department of Electrical & Computer Engineering at the National University of Singapore (NUS) Faculty of Engineering has developed a new Magnetoresistive Random Access Memory (MRAM) technology that will boost information storage in electronic systems. The innovative technology will drastically increase storage space and enhance memory which will ensure that fresh data stays intact, even in the case of a power failure. The team has already filed a US provisional patent for their technology.
Led by Dr Yang Hyunsoo, the team developed a new device structure useful for the next generation MRAM chip which can potentially be applied to enhance the user experience in consumer electronics, including personal computers and mobile devices such as laptops and mobile phones. The new technology can also be applied in transportation, military and avionics systems, industrial motor control and robotics, industrial power and energy management as well as health care electronics.
Commenting on the benefits of their chip, Dr Yang said, “From the consumer’s standpoint, we will no longer need to wait for our computers or laptops to boot up. Storage space will increase, and memory will be so enhanced that there is no need to regularly hit the ‘save’ button as fresh data will stay intact even in the case of a power failure. Devices and equipment can now have bigger memory with no loss for at least 20 years or probably more. Currently pursued schemes with a very thin magnetic layer can only retain information for about a year.”
Dr Yang added, “With the heavy reliance on our mobile phones these days, we usually need to charge them daily. Using our new technology, we may only need to charge them on a weekly basis.”
The innovation is expected to change the architecture of computers, making them much easier to manufacture as it does away with many facilities such as flash memory, effectively bringing down the cost. Major semiconductor players such as Samsung, Intel, Toshiba and IBM are intensifying research efforts in MRAM and the team’s innovative technology has received strong interest from the industry.
How the chip works
MRAM is emerging as the next big thing in data storage as it is non-volatile, which means that data can be retrieved even when the electronic equipment or device is not powered up. There is strong research interest in MRAM as it has the potential to provide high bit density and low power consumption.
The current methods of applying MRAM revolve round the technology which uses an ‘in-plane’, or horizontal, current-induced magnetisation. This method uses ultra-thin ferromagnetic structures which are challenging to implement due to their thickness of less than 1 nanometre. Their manufacturing reliability is low and tends to retain information for only less than a year.
The NUS team, in collaboration with the King Abdullah University of Science and Technology in Saudi Arabia, was able to resolve this problem by incorporating magnetic multilayer structures as thick as 20 nanometre, providing an alternative film structure for transmission of electronic data and storage. This innovation allows for storage which can last for a minimum of 20 years.
The Latest Bing News on:
Magnetoresistive random access memory
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Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of magnetoresistive random access memory (MRAM) persistent memory solutions, announced that Sanjeev Aggarwal, ...
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Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced that IBM has ...
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- A Paradigm Shift in RAM Is About to Make Computing Unstoppableon April 24, 2024 at 5:39 am
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- Everspin Technologies Unveils PERSYST, Simplifying Persistent Memory Solutionson April 8, 2024 at 10:04 pm
Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of magnetoresistive random access memory (MRAM) persistent memory solutions, announced today ...
- Everspin Technologies Unveils PERSYST, Simplifying Persistent Memory Solutionson April 8, 2024 at 6:02 pm
CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of magnetoresistive random access memory (MRAM) persistent memory ...
The Latest Google Headlines on:
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[google_news title=”” keyword=”Magnetoresistive random access memory” num_posts=”10″ blurb_length=”0″ show_thumb=”left”] [/vc_column_text]The Latest Bing News on:
MRAM
- Magneto Resistive RAM Market Size Projected To Show Strong Growthon May 23, 2024 at 7:01 pm
The global magneto resistive RAM (MRAM) market size was US$ 270.5 million in 2021. The global magneto resistive RAM (MRAM) market size is forecast to reach US$ 12,878.2 million by 2030, growing at a ...
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- IEEE Roadmap Outlines Development Of Digital Storage Technologyon May 21, 2024 at 11:20 am
The IEEE IRDS Mass Storage Roadmap outlines projections for NAND flash, emerging non-volatile memories, HDDs, magnetic tape, optical recording and DNA storage.
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- Everspin Technologies Inc MRAMon May 19, 2024 at 5:00 pm
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- Next-Generation IBM FlashCore Modules Feature Everspin's PERSYST 1 Gigabit STT-MRAM, Enhancing Reliabilityon April 30, 2024 at 5:00 am
Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced that IBM has ...
- A Paradigm Shift in RAM Is About to Make Computing Unstoppableon April 24, 2024 at 5:29 am
Now, a new discovery that analyzes how light interacts with magnets could make MRAM even better than ever before. Your computer wouldn’t be very useful without RAM, which is short for random ...
- Everspin Technologies Stock (NASDAQ:MRAM), Quotes and News Summaryon February 25, 2024 at 3:15 pm
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- "Perfect" memory that could one day replace three types of storage gets very early prototype — SOT-MRAM is cache, system memory and storage rolled into oneon February 3, 2024 at 1:04 am
Industrial Technology Research Institute (ITRI) and Taiwan Semiconductor Manufacturing Company (TSMC) have announced the creation of a SOT-MRAM (spin-orbit torque magnetic random-access memory ...
- How to Elevate RRAM and MRAM Design Experience to the Next Levelon December 19, 2023 at 6:07 am
Both are considered next-generation technologies that could revolutionize electronic memory. This article will explore the potential advantages of RRAM and MRAM in various applications and elucidate ...
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