memory devices

New faster, denser synapse like memory shows great promise for the rapidly growing AI and machine learning fields
via AI.Nony.Mous New faster, denser synapse like memory shows great promise for the rapidly growing
Cross-sectional TEM images and energy-dispersive x-ray measurements from high-angle annular dark-field scanning TEM for different thin films. (A) Pure HfOx deposited at 400°C. Clear crystallites are visible in the film; red arrows indicate some of the grain boundaries. (B) Pure HfOx deposited at 30°C. While these films are not polycrystalline like pure HfOx deposited at 400°C, neither are they as uniform as the composite films presented in (C). (C) The thin films which resulted in stable electrical performance are amorphous or nanocrystalline. Some pillar-like structures can be discerned, indicated by red arrows. The addition of Ba to the films clearly leads to material uniformity by suppressing crystallization. (D) High-angle annular dark-field scanning TEM (HAADF-STEM), zoomed in on some of the pillars. In addition, darker nanoparticles can be discerned throughout the films; four randomly chosen particles are marked by red circles. (E) HAADF-STEM image to indicate the area scanned for EDX and the elemental distribution of Hf and Ba. (F) Line scan EDX results acquired from the area indicated in (E). The dark areas in the HAADF-STEM image contain more Ba than the brighter ones. The ratio between Ba and Hf in the pillars is about 0.25 to 0.33, consistent with the Rutherford backscattering analysis discussed later. Credit: Science Advances (2023). DOI: 10.1126/sciadv.adg1946
A new device that processes data in a similar way as the synapses in the human brain
Cross-sectional TEM images and energy-dispersive x-ray measurements from high-angle annular dark-field scanning TEM for different
Pneumatic RAM: Air-powered computer memory for soft robots
An 8-bit pneumatic RAM chip used to help a soft robot control its movements. (William
Solving AI ‘s memory bottleneck with the smallest demonstrated magnetic memory device
An optical image of the device structure with 4 micrometer pillar diameter. Credit: Northwestern University/University
Ultra-efficient atomic computers that could store more data and consume 100 times less power

As computers continue to infiltrate almost every aspect of modern life, their negative impact on

A very promising stepping stone toward much more energy-efficient and faster computing

Scientists at the Tokyo Institute of Technology (Tokyo Tech) and the University of Tokyo (UTokyo)

The invention of universal computer memory could solve the digital technology energy crisis

A new type of computer memory which could solve the digital technology energy crisis has been

The road is open to ultra-low-power microchips

Innovative approach to controlling magnetism could lead to next-generation memory and logic devices. A new

A data-storage material switches physical form opening the door to revolutionizing how computers handle information

Kyoto University maps nanoscale changes in memory material A team of scientists has created the

New technique leads to world’s densest solid-state memory that can store 45 million songs on the surface of a quarter

The most dense solid-state memory ever created could soon exceed the capabilities of current computer

Atomically thin electronic memory devices of the future

Berkeley Lab study is first to show potential of energy-efficient next-gen electronic memory The same

Reality closes in on a disk drive using racetrack memory with no moving parts

Today’s world, rapidly changing because of “big data”, is encapsulated in trillions of tiny magnetic

New stimuli-responsive materials can be used in memory devices, artificial muscles and drug delivery systems

Scientists at Nagoya University have developed a new way to make stimuli-responsive materials in a

ReRAM memory chips perform computing tasks, greatly increases computing speed and saves energy

A team of international scientists have found a way to make memory chips perform computing

T-waves will “speed up” computer memory by a factor of 1,000

Together with their colleagues from Germany and the Netherlands, scientists at the Moscow Institute of