Researchers at Tohoku University in Japan have discovered a switch to control the spin current, a mechanism needed for information processing with full spin-based devices.
This is significant because although the technology behind detecting and generating the spin current has been established for some time, a long-missing component in the history of spintronics has been a “spin current switch.” It’s the equivalent of the transistor used in electronics to enable and disable the flow of electricity.
Spintronics is an emerging field of nanoscale electronics which uses not only the charge of electrons but also the spin of electrons. The technology doesn’t require a specialized semiconductor material resulting in reduced manufacturing costs.
Other advantages include less energy requirement, as well as low power consumption with competitive data transfer and storage capacity. It has been used in a variety of devices for information processing, memory and storage – in particular, ultra-high density hard drives and non-volatile memories.
Materials have built-in-mechanisms to enable the electrical detection of the spin current, such as the inverse spin hall effect (ISHE). Using the ISHE, spin current generated by other forms of energy like microwaves (spin pumping) and heat (spin Seebeck effect) is transformed into electrical voltage in the material.
Now, Zhiyong Qiu, Dazhi Hou, Eiji Saitoh, and collaborators at Tohoku and Mainz Universities, have proved that a newly developed layered structure of materials works as a spin current switch. Using the structure, they were able to control the transmission of spin current at a 500% increase at near room temperature.
The tri-layer structure sandwiches Cr2O3 between yttrium iron garnet (YIG) and platinum (Pt). The YIG/Pt pair is a standard combination of materials used to investigate the spin current flow – both are insulators in which electrons cannot flow. YIG, a ferrimagnet electric insulator, generates spin current in response to RF microwave or temperature gradient and Pt, a paramagnetic metal, detects the spin current as an electric voltage via ISHE.
By placing Cr2O3 between the materials, the voltage signal at Pt reflects how much the Cr2O3 layer can transmit the spin current. The researchers investigated the change of the voltage against the temperature and the applied magnetic field.
“We observed a massive reduction in the voltage signal when crossing the temperature at around 300K, at which point Cr2O3 changes its phase from paramagnet to anti-ferromagnet (Neel point),” said Assistant Professor Dazhi Hou. The change of the spin current transmission is a near 500% increase under the application of a magnetic field. This behaviour suggests that the layered structure works as a spin current switch when crossing the Neel point of Cr2O3 or applying a magnetic field.
“Just as the transistor revolutionized electronics by enabling the scalable development of electronic devices, the discovery of a spin current switch is likely to take spintronics in a new direction,” said Professor Eiji Saitoh. “It’s a significant development.”
The Latest on: Spintronics
[google_news title=”” keyword=”spintronics” num_posts=”10″ blurb_length=”0″ show_thumb=”left”]
via Google News
The Latest on: Spintronics
- Revolutionizing Electronics: A Comprehensive Study on the Global Spintronics Market by Future Market Insights, Inc.on September 28, 2023 at 7:19 am
The spintronics market is projected to reach a value of US$ 687.1 million in 2023, with a forecasted compound annual growth rate (CAGR) of 7.3% leading to a market size of US$ 1,394.2 million by 2033.
- More memory on the hard disk: hit of the research worldon September 27, 2023 at 9:43 am
Stuart Parkin, Director at the Max Planck Institute for Microstructure Physics in Halle, is honored as Citation Laureate for his research in the field of spintronics and in particular for the ...
- Imaging the elusive skyrmion: Neutron tomography reveals their shapes and dynamics in bulk materialson September 26, 2023 at 2:55 am
Scientists at the National Institute of Standards and Technology (NIST) with colleagues elsewhere have employed neutron imaging and a reconstruction algorithm to reveal for the first time the 3D ...
- Topological materials open a new pathway for exploring spin hall materialson September 22, 2023 at 6:34 pm
A recent discovery in spintronics could potentially transform future electronics. A group of researchers have revealed the key role of cobalt-tin-sulfur in reducing energy consumption, unlocking new ...
- UTSA harnesses spin of electrons to power tech deviceson September 20, 2023 at 5:00 pm
UTSA engineers are using spintronics, the study of an electron’s intrinsic quantum mechanical property called spin, to allow low-power operation with a possible application in quantum computing. “An ...
- Team discusses the blueprint for ultrafast spintronicson September 19, 2023 at 7:39 am
Assistant Professor Wencan Jin and his team at Auburn University's Department of Physics are pushing the boundaries of technology with their latest publication on spin dynamics in two-dimensional (2D) ...
- Organic Spintronics Market Analysis 2023: Upcoming Trends, Challenges and Future Business Growth by 2030on September 10, 2023 at 6:16 pm
Organic Spintronics Market Report Overview: The Global Organic Spintronics market is expected to experience significant growth between 2023 and 2030. In 2022, the market witnessed a steady growth ...
- Organic Spintronics Market 2023-2030 | Strategies for Global Outreachon September 4, 2023 at 7:28 pm
Introducing Our Latest Organic Spintronics Market Research Report Unveiling In-Depth Analysis of Industry Trends, Growth, and Opportunities: The Organic Spintronics Market 2023-2030 | Latest ...
- Spintronics: X-ray microscopy unravels the nature of domain wallson August 28, 2023 at 6:38 am
Magnetic skyrmions are tiny vortices-like of magnetic spin textures that - in principle - can be used for spintronic devices, for example very fast and energy-efficient data storage devices.
via Bing News