Physicists from the Department of Nanophotonics and Metamaterials of ITMO University have experimentally demonstrated the feasibility of designing an optical analog of a transistor based on a single silicon nanoparticle. Because transistors are some of the most fundamental components of computing circuits, the results of the study have crucial importance for the development of optical computers, where transistors must be very small and ultrafast at the same time.
The performance of modern computers, which use electrons as signal carriers, is largely limited by the time needed to trigger the transistor – usually around 0.1 – 1 nanoseconds (10?9 of a second). Next-generation optical computers, however, rely on photons to carry the useful signal, which heavily increases the amount of information passing through the transistor per second. For this reason, the creation of an ultrafast and compact all-optical transistor is considered to be instrumental in the development of optical computing. Such a nanodevice would enable scientists to control the propagation of an optical signal beam by means of an external control beam within several picoseconds (10?12 of a second).
In the study, a group of Russian scientists from ITMO University, Lebedev Physical Institute and Academic University in Saint Petersburg put forward a completely new approach to design such optical transistors, having made a prototype using only one silicon nanoparticle.
The scientists found that they can dramatically change the properties of a silicon nanoparticle by irradiating it with intense and ultrashort laser pulse. The laser thus acts as a control beam, providing ultrafast photoexcitation of dense and rapidly recombining electron-hole plasma whose presence changes the dielectric permittivity of silicon for a few picoseconds. This abrupt change in the optical properties of the nanoparticle opens the possibility to control the direction, in which incident light is scattered. For instance, the direction of nanoparticle scattering can be changed from backward to forward on picoseconds timescale, depending on the intensity of the incident control laser pulse. This concept of ultrafast switching is very promising for designing of all-optical transistor.
“Generally, researchers in this field are focused on designing nanoscale all-optical transistors by means of controlling the absorption of nanoparticles, which, in essence, is entirely logical. In high absorption mode, the light signal is absorbed by the nanoparticle and cannot pass through, while out of this mode the light is allowed to propagate past the nanoparticle. However, this method did not yield any decisive results,” explains Sergey Makarov, lead author of the study and senior researcher at the Department of Nanophotonics and Metamaterials.“Our idea is different in the sense that we control not the absorption properties of the nanoparticle, but rather its scattering diagram. Let’s say, the nanoparticle normally scatters almost all incident light in the backward direction, but once we irradiate it by a control pulse, it becomes reconfigured and starts scattering light forward.”
The choice of silicon as a material for the optical transistor was not accidental.
The Latest on: All-optical transistor
via Google News
The Latest on: All-optical transistor
- New optical switch could lead to ultrafast all-optical signal processingon August 1, 2022 at 2:50 am
Engineers at Caltech have developed a switch—one of the most fundamental components of computing—using optical, rather than electronic, components. The development could aid efforts to achieve ...
- Finwave Semiconductor Raises $12.2M Series A Funding Round to Advance the Ultimate Transistor for 5Gon July 27, 2022 at 7:03 am
DGaNTM (Gallium Nitride) innovators Finwave Semiconductor, Inc.ctor, Inc. today announced a $12.2 million Series A funding round ...
- Flexible Polymer Paves Way for Organic Semiconductorson July 26, 2022 at 5:00 pm
Conventional metal-oxide semiconductor (CMOS) transistors are one of the devices that has reached ... of chemistry methods to create semiconducting devices with “interesting optical and electrical ...
- How to efficiently drive micro LED displayson July 26, 2022 at 12:23 pm
IMEC's KRIS MYNY summarizes a hybrid design approach for micro LED thin-film transistor backplanes that might reduce ... In active matrix driving (comparable to in AMOLED designs), all pixels contain ...
- transistor troubleshootingon July 25, 2022 at 5:00 pm
Earlier this year a simple indicator LED brought the Keck 1 telescope, a 370 tons mass, to a halting stop. How exactly did an LED do this? Simple: it did nothing. As it so happens, [Andrew Cooper ...
- What’s After FinFETs?on July 23, 2022 at 5:00 pm
Fried pointed out that there is no one-size-fits-all solution. For example, finFETs or follow-on transistors make sense for high-end ... photomask makers are developing EUV masks. Today’s optical mask ...
- Optical Film Market to Garner $40.4 Billion, Globally, By 2030 at 7.6% CAGR, Says Allied Market Researchon July 18, 2022 at 6:06 am
Optical films have various applications such as in thin film transistors (TFTs), liquid crystal display (LCD) panels, and organic light emitting diode (OLED) panels. Furthermore, optical films are ...
- Onto Innovation Announces Third Customer has Qualified the Atlas® V System for Gate-All-Around Development and Pilot Productionon July 13, 2022 at 8:21 am
platform for its uniquely powerful metrology solution for gate-all-around (GAA) / nanosheet transistors, the next-generation device architecture for advanced logic. This press release features ...
- Luisier wins SNSF Advanced Grant to develop simulation tools for nanoscale deviceson July 7, 2022 at 12:41 pm
Moore’s scaling law, which observes that transistor sizes decrease ... integration of novel materials, all of these functionalities involve electrical, optical, and thermal effects.
via Bing News